Mô đun IGBT Infineon FP25R12KT4

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:	Details
Product:	IGBT Silicon Modules
Configuration:	3-Phase
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Continuous Collector Current at 25 C:	25 A
Gate-Emitter Leakage Current:	100 nA
Pd - Power Dissipation:	160 W
Package / Case:	Module
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	SMD/SMT
Product Type:	IGBT Modules
Series:	Trenchstop IGBT4 - T4
	10
Subcategory:	IGBTs
Technology:	Si
Tradename:	TRENCHSTOP EconoPIM
Part # Aliases:	SP000546190 FP25R12KT4BOSA1
Unit Weight:	180 g